1 CPM2-1200-0080B silicon carbide power mosfet z -fe t tm mosfet n-channel enhancement mode features ? high speed switching with low capacitances ? high blocking voltage with low r ds(on) ? easy to parallel and simple to drive ? avalanche ruggedness ? resistant to latch-up ? halogen free, rohs compliant benefts ? higher system effciency ? reduced cooling requirements ? increased system switching frequency applications ? solar inverters ? high voltage dc/dc converters ? motor drives ? switch mode power supplies ? ups package part number package CPM2-1200-0080B die v ds 1200 v i d @ 25?c 31.6 a r ds(on) 80 m ? maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note i ds (dc) continuous drain current 31.6 a v gs @20 v, t c = 25?c note 1 20 v gs @20 v, t c = 100?c i ds (pulse) pulsed drain current 60 a pulse width t p limited by t jmax t c = 25?c v gs gate source voltage -10/+25 v t j , t stg operating junction and storage temperature -55 to +150 ?c t l solder temperature 260 ?c note 1: assumes a r jc < 0.60 k/w f CPM2-1200-0080B rev. -
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1200 v v gs = 0 v, i d = 100 a v gs(th) gate threshold voltage 1.7 2.2 v v ds = 10v, i d = 1 ma fig. 7 3.2 v ds = 10v, i d = 10 ma 1.2 1.7 v ds = 10v, i d = 1 ma i dss zero gate voltage drain current 1 100 a v ds = 1200 v, v gs = 0 v 10 250 v ds = 1200 v, v gs = 0 v t j = 150oc i gss gate-source leakage current 0.25 a v gs = 20 v, v ds = 0 v r ds(on) drain-source on-state resistance 80 98 m ? v gs = 20 v, i d = 20 a fig. 7 150 208 v gs = 20 v, i d = 20a, t j = 150oc g fs transconductance 9.8 s v ds = 20 v, i ds = 20 a fig. 6 8.5 v ds = 20 v, i ds = 20 a, t j = 150oc c iss input capacitance 950 pf v gs = 0 v v ds = 1000 v f = 1 mhz v ac = 25 mv fig. 15 c oss output capacitance 80 c rss reverse transfer capacitance 6.5 e oss c oss stored energy 40 j fig. 14 r g internal gate resistance 4.6 f = 1 mhz , v ac = 25 mv built-in sic body diode characteristics symbol parameter typ. max. unit test conditions note v sd diode forward voltage 3.3 v v gs = -5 v, i f = 10 a, t j = 25 oc fig. 9 3.1 v gs = -2 v, i f = 10 a, t j = 25 oc t rr reverse recovery time 40 ns v gs = -5 v, i f = 20 a, t j = 25 oc v r = 800 v, d i f /d t= 350 a/s q rr reverse recovery charge 165 nc i rrm peak reverse recovery current 6.4 a gate charge characteristics symbol parameter typ. max. unit test conditions note q gs gate to source charge 10.8 nc v ds = 800 v, v gs = 0/20 v i d =20 a per jedec24 pg 27 fig. 16 q gd gate to drain charge 18.0 q g gate charge total 49.2 * note 1: for inductive and resistive switching data and waveforms please refer to data - sheet for packaged device. part number c2m0080120d. CPM2-1200-0080B rev. -
3 0.04 0.08 0.12 0.16 0.20 0 10 20 30 40 on resistance, r ds on ( ) drain - source current, i ds (a) parameters: v gs = 20 v - 55 c 0 c 25 c 75 c 150 c 125 c 100 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 normalized on resistance, r ds(on) (pu) junction temperature, t j ( o c) v gs = 20 v i ds = 20 a 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 11 12 drain current, i d (a) drain to source voltage, v ds (v) v gs = 20v v gs = 18v v gs = 16v v gs = 14v v gs = 12v v gs = 10v t j = 25 c 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 20 drain current, i d (a) drain to source voltage, v ds (v) v gs = 20v v gs = 14v v gs = 12v v gs = 10v t j = 150 c v gs = 16v v gs = 18v 2. = 150 typical performance figure 4. on-resistance vs. drain current figure 6. typical transfer characteristics figure 1. typical output characteristics t 25 c figure 3. normalied on-resistance vs. temperature 0.00 0.05 0.10 0.15 0.20 0.25 0.30 10 12 14 16 18 20 on resistance, r ds on ( ) gate - source voltage, v gs (v) parameters: i ds = 20 a - 55 c 150 c 25 c 0 10 20 30 40 0 2 4 6 8 10 12 14 drain current, i d (a) gate to source voltage, v gs (v) 25 c 150 c figure 5. on-resistance s. gate voltage CPM2-1200-0080B rev. -
4 typical performance figure 8. typical body diode characteristics t j = -55 oc figure 11. typical 3rd quadrant characteristics t j = -55 oc figure 9. typical body diode characteristics t j = 25 oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 v v v v s = 10 v s = 1 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 - s s - s v v s v gs = 0 v v gs = - 2 v v gs = - 5 v = - 55 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 - s s - s v v s v gs = 0 v v gs = - 2 v v gs = - 5 v = 25 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 - s s - s v v s v gs = 0 v v gs = - 2 v v gs = - 5 v = 150 figure 7. typical and minimum threshold voltage vs. temperature - 50 - 40 - 30 - 20 - 10 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v figure 10. typical body diode characteristics t j = 150 oc - 50 - 40 - 30 - 20 - 10 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v figure 12. typical 3rd quadrant characteristics t j = 25 oc CPM2-1200-0080B rev. -
5 0 4 8 12 16 20 0 10 20 30 40 50 gate - source voltage, v gs (v) gate - source charge, q gs (nc) conditions: v ds = 800 v i ds = 20 a i gs = 10 ma t j = 25 c typical performance figure 15a and 15b. typical capacitances vs. drain voltage at v gs = 0 v and f = 1 mhz figure 13. typical 3rd quadrant characteristics characteristic t j = 150 oc - 50 - 40 - 30 - 20 - 10 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v 0 10 20 30 40 50 60 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain - source voltage, v ds (v) 1 10 100 1000 10000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss c rss conditions: v gs = 0 v f test = 1 mhz 1 10 100 1000 10000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss c rss conditions v gs = 0 v f test = 1 mhz figure 14. typical transfer characteristics figure 16. typical gate characteristic 25 oc CPM2-1200-0080B rev. -
6 6 parameter typical value unit die dimensions (l x w) 3.10 3.36 mm exposed source pad metal dimensions (lxw) each 1.04 1.43 mm gate pad dimensions (l x w) 0.80 0.50 mm die thickness 180 40 m top side source metallization (al) 4 m top side gate metallization (al) 4 m bottom drain metallization (ni/ag) 0.8 / 0.6 m chip dimensions mechanical parameters this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec and z-fet are trademarks of cree, inc. CPM2-1200-0080B rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power
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